In the fast-growing semiconductor industry, silicon carbide (SiC) has become a crucial material due to its superior performance in high-temperature, high-voltage, and high-frequency environments. Guangzhou Summit Crystal Semiconductor Technology Co., Ltd. (Summit Crystal), a leader in SiC single crystal R&D and production, made a powerful impression at the prestigious ICSCRM 2024 exhibition by showcasing its latest innovations. With a strong focus on technological advancement, Summit Crystal is pushing the boundaries in SiC substrate technology.
Breakthrough in 8-Inch N-Type Silicon Carbide Substrates
At ICSCRM 2024, Summit Crystal unveiled its groundbreaking 8-inch N-Type silicon carbide substrates, marking a significant leap in SiC material quality. The company has successfully achieved 8-inch N-Type 4H-SiC single crystal substrates with near-zero threading screw dislocation (TSD) density and low basal plane dislocation(BPD) density. This breakthrough enhances the reliability, efficiency, and performance of SiC substrates, crucial for power electronics and other high-performance applications. This advancement also represents a significant step forward in the industrialization of domestic 8-inch N-Type substrates, positioning Summit Crystal at the forefront of the global SiC industry.
Global Engagement and Collaborative Partnerships
During the ICSCRM 2024 exhibition, Summit Crystal engaged in deep discussions with industry experts, potential customers, and global partners. Many attendees expressed keen interest in the company’s new products and technologies, which resulted in several preliminary collaboration agreements with domestic and international enterprises. These partnerships are expected to drive further global business expansion and establish Summit Crystal as a key player in the silicon carbide market.
Innovation and Market Leadership
Since its founding, Summit Crystal has been committed to advancing the R&D and production of silicon carbide single crystal materials. The company operates three major production hubs in Guangzhou, Zhongshan, and Jinan, each supporting a fully integrated production line for silicon carbide crystal growth and substrate preparation. Summit Crystal’s portfolio includes 6-inch and 8-inch N-Type and semi-insulating SiC substrates, which are utilized in diverse sectors such as electric vehicles (EVs), telecommunications, high speed railway system, power grid, and photovoltaic energy storage.
By participating in ICSCRM 2024, Summit Crystal not only demonstrated its cutting-edge technologies but also expanded its international presence and influence. The company is actively fostering collaborative relationships with key players across the global semiconductor supply chain, further establishing its leadership in SiC technologies and innovations.
Driving the Future of Silicon Carbide Technology
Looking to the future, Summit Crystal is committed to increasing R&D investments to further refine its N-Type SiC substrates and meet the rising demand for high-performance SiC materials. The company will continue its presence at major semiconductor exhibitions, forging stronger ties with industry leaders and advancing SiC technology for power electronics, EVs, renewable energy, and other applications.
Summit Crystal warmly invites you to explore their innovative SiC solutions at upcoming exhibitions. By working together, we can accelerate the development of silicon carbide technology and unlock new possibilities for the global semiconductor industry.
