8-inch N-type 4H–SiC single crystals were grown on 4◦ off-axis seeds by the physical vapor transport (PVT) method. The electrical properties of 8-inch 4H–SiC wafers were assessed by contactless resistivity mapping. The resistivity of the whole wafer is inhomogeneous with an inhomogeneity of 4.8 %, much higher than that of standard 6-inch wafers with a resistivity inhomogeneity of 1.2 %. This nonuniformity phenomenon is attributed to facet formation caused by discontinuities in the thermal field as the crystal diameter increases. Due to the facet effect, the nitrogen doping concentration in the facet region is higher than that in other regions. By optimizing the thermal field through adjustment of the growth conditions, a nearly flat and slightly convex 8-inch SiC crystal growth interface was obtained. The uniformity of the resistivity of 8-inch SiC wafers is significantly improved, with an inhomogeneity of 1.6 %.
On December 29, 2023,Shandong Summit Crystal Semiconductor Co., LTD's 8-inch SiC single crystal and substrate industrialization project was officially filed.
Recently, under the guidance of Guangzhou Science and Technology Bureau and sponsored by Guangzhou Science and Technology Innovation Enterprise Association, the "2021 Guangzhou Unicorn Innovative Enterprise List" and "2021 Guangzhou High-end Enterprise List" have been officially announced! With excellent strength, Summit Crystal has been selected into the list of "Guangzhou Future Unicorn Innovative Enterprise" and "Guangzhou Advanced And Sophisticated Enterprise".
On September 18th, Summit Crystal held the third anniversary of the establishment of the company and the project capping ceremony at nansha Wafer Headquarters base located at Wantai Road, Wanqingsha Town.
