Recently, Guangzhou Summit Crystal Semiconductor Co., Ltd. (hereinafter referred to as "Summit Crystal") was honored with the Annual Recommended Brand Award for Substrate Materials at the 10th International Forum on Wide Bandgap Semiconductors (IFWS2024) & the 21st China International Forum on Solid State Lighting (SSLCHINA2024), highlighting its outstanding achievements and leading position in the field of silicon carbide substrates. This accolade is not only a recognition of Summit Crystal's technical strength and market influence but also an affirmation of its contributions to the development of the third-generation semiconductor industry.
At ICSCRM 2024, Summit Crystal unveiled its groundbreaking 8-inch N-Type silicon carbide substrates, marking a significant leap in SiC material quality. The company has successfully achieved 8-inch N-Type 4H-SiC single crystal substrates with near-zero threading screw dislocation (TSD) density and low basal plane dislocation(BPD) density. This breakthrough enhances the reliability, efficiency, and performance of SiC substrates, crucial for power electronics and other high-performance applications. This advancement also represents a significant step forward in the industrialization of domestic 8-inch N-Type substrates, positioning Summit Crystal at the forefront of the global SiC industry.
8-inch N-type 4H–SiC single crystals were grown on 4◦ off-axis seeds by the physical vapor transport (PVT) method. The electrical properties of 8-inch 4H–SiC wafers were assessed by contactless resistivity mapping. The resistivity of the whole wafer is inhomogeneous with an inhomogeneity of 4.8 %, much higher than that of standard 6-inch wafers with a resistivity inhomogeneity of 1.2 %. This nonuniformity phenomenon is attributed to facet formation caused by discontinuities in the thermal field as the crystal diameter increases. Due to the facet effect, the nitrogen doping concentration in the facet region is higher than that in other regions. By optimizing the thermal field through adjustment of the growth conditions, a nearly flat and slightly convex 8-inch SiC crystal growth interface was obtained. The uniformity of the resistivity of 8-inch SiC wafers is significantly improved, with an inhomogeneity of 1.6 %.
On December 29, 2023,Shandong Summit Crystal Semiconductor Co., LTD's 8-inch SiC single crystal and substrate industrialization project was officially filed.
Recently, under the guidance of Guangzhou Science and Technology Bureau and sponsored by Guangzhou Science and Technology Innovation Enterprise Association, the "2021 Guangzhou Unicorn Innovative Enterprise List" and "2021 Guangzhou High-end Enterprise List" have been officially announced! With excellent strength, Summit Crystal has been selected into the list of "Guangzhou Future Unicorn Innovative Enterprise" and "Guangzhou Advanced And Sophisticated Enterprise".
